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====== ast-sputter ====== {{ map-ast-sputter.svg|NanoLab map showing cha location}} [[https://docs.google.com/document/d/13V5LRJNtbk_qY8WQqyUOIFEq8mjD48jEXZ0OBaOyMBw/edit|NanoLab ast-sputter manual]] ast-sputter is a general-purpose sputtering tool capable of sputtering up to two materials at once, with Ar and optional O2/N2 process gas, onto a single heated 6" platen (that can hold chips or a wafer). This is the most commonly used sputterer in the Nanolab. ===== Process Notes ===== ^ Date ^ Person ^ Data ^ | 20 Oct 2021 | Daniel | Targets currently stored in the chase behind the tool include: Co, Fe, Ni, Ta, Si, Ag, Nb, Zr, ITO, Hf, W/Ti, W, Mg, Mo, Ru, MgF2, Cr, SiO2, BTO, Er2O3. Also, Al, Ti, Cu are the default targets and are stored in the tool. Finally, I believe Pt and Au targets can be checked out from the front desk. | | 21 Oct 2021 | Daniel | Deposited Cr with the following recipe: use gun/target 1, DC pulsed mode (always use this, it's apparently just generally better). 15s chamber gas flow stabilization (75sccm argon, 0 power) (note: I'm setting flow rate instead of chamber pressure because the chamber closed-loop pressure controller, the "baratron", is currently broken), 120s oxide removal (200W, shutter closed), 15s power stabilization (150W, shutter closed), 300s deposition (150W, shutter open). Result: 80nm Cr deposited for a deposition rate about 16 nm/min. | | 7 Nov 2021 | Daniel | Deposited ITO with the following recipe: gun/target 1, DC pulsed, 15s gas flow stabilization (75sccm Ar, 0 power) (baratron still broken), 150s oxide removal (200sccm Ar, 150W, shutter closed), 2400s deposition (100W, shutter open). Chamber pressure 2.3 to 2.6 mTorr. Result: 640nm ITO deposited for a deposition rate about 16 nm/min (a previous ITO run also at 100W was closer to 13nm/min with 2.3mTorr pressure). Sheet resistance is ~75ohm/sq; decreases > 5x with annealing at ~350C. |