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ast-sputter
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ast-sputter [2021/12/09 23:10] dteal |
ast-sputter [2021/12/09 23:13] (current) dteal |
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| | 20 Oct 2021 | Daniel | Targets currently stored in the chase behind the tool include: Co, Fe, Ni, Ta, Si, Ag, Nb, Zr, ITO, Hf, W/Ti, W, Mg, Mo, Ru, MgF2, Cr, SiO2, BTO, Er2O3. Also, Al, Ti, Cu are the default targets and are stored in the tool. Finally, I believe Pt and Au targets can be checked out from the front desk. | | | 20 Oct 2021 | Daniel | Targets currently stored in the chase behind the tool include: Co, Fe, Ni, Ta, Si, Ag, Nb, Zr, ITO, Hf, W/Ti, W, Mg, Mo, Ru, MgF2, Cr, SiO2, BTO, Er2O3. Also, Al, Ti, Cu are the default targets and are stored in the tool. Finally, I believe Pt and Au targets can be checked out from the front desk. | | ||
| | 21 Oct 2021 | Daniel | Deposited Cr with the following recipe: use gun/target 1, DC pulsed mode (always use this, it's apparently just generally better). 15s chamber gas flow stabilization (75sccm argon, 0 power) (note: I'm setting flow rate instead of chamber pressure because the chamber closed-loop pressure controller, the " | | 21 Oct 2021 | Daniel | Deposited Cr with the following recipe: use gun/target 1, DC pulsed mode (always use this, it's apparently just generally better). 15s chamber gas flow stabilization (75sccm argon, 0 power) (note: I'm setting flow rate instead of chamber pressure because the chamber closed-loop pressure controller, the " | ||
| - | | 7 Nov 2021 | Daniel | Deposited ITO with the following recipe: gun/target 1, DC pulsed, 15s gas flow stabilization (75sccm Ar, 0 power) (baratron still broken), 150s oxide removal (200sccm Ar, 150W, shutter closed), 2400s deposition (100W, shutter open). Chamber pressure 2.3 to 2.6 mTorr. Result: 640nm ITO deposited for a deposition rate about 16 nm/min (a previous ITO run also at 100W was closer to 13nm/min with 2.3mTorr pressure). | | + | | 7 Nov 2021 | Daniel | Deposited ITO with the following recipe: gun/target 1, DC pulsed, 15s gas flow stabilization (75sccm Ar, 0 power) (baratron still broken), 150s oxide removal (200sccm Ar, 150W, shutter closed), 2400s deposition (100W, shutter open). Chamber pressure 2.3 to 2.6 mTorr. Result: 640nm ITO deposited for a deposition rate about 16 nm/min (a previous ITO run also at 100W was closer to 13nm/min with 2.3mTorr pressure). Sheet resistance is ~75ohm/sq; decreases > 5x with annealing at ~350C. | |
ast-sputter.txt ยท Last modified: 2021/12/09 23:13 by dteal
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