Berkeley Autonomous Microsystems Lab

This page is read only. You can view the source, but not change it. Ask your administrator if you think this is wrong.


====== ast-sputter ======

{{ map-ast-sputter.svg|NanoLab map showing cha location}}

[[https://docs.google.com/document/d/13V5LRJNtbk_qY8WQqyUOIFEq8mjD48jEXZ0OBaOyMBw/edit|NanoLab ast-sputter manual]]

ast-sputter is a general-purpose sputtering tool capable of sputtering up to two materials at once, with Ar and optional O2/N2 process gas, onto a single heated 6" platen (that can hold chips or a wafer). This is the most commonly used sputterer in the Nanolab.

===== Process Notes =====

^ Date ^ Person ^ Data ^
| 20 Oct 2021 | Daniel | Targets currently stored in the chase behind the tool include: Co, Fe, Ni, Ta, Si, Ag, Nb, Zr, ITO, Hf, W/Ti, W, Mg, Mo, Ru, MgF2, Cr, SiO2, BTO, Er2O3. Also, Al, Ti, Cu are the default targets and are stored in the tool. Finally, I believe Pt and Au targets can be checked out from the front desk. |
| 21 Oct 2021 | Daniel | Deposited Cr with the following recipe: use gun/target 1, DC pulsed mode (always use this, it's apparently just generally better). 15s chamber gas flow stabilization (75sccm argon, 0 power) (note: I'm setting flow rate instead of chamber pressure because the chamber closed-loop pressure controller, the "baratron", is currently broken), 120s oxide removal (200W, shutter closed), 15s power stabilization (150W, shutter closed), 300s deposition (150W, shutter open). Result: 80nm Cr deposited for a deposition rate about 16 nm/min. |
| 7 Nov 2021 | Daniel | Deposited ITO with the following recipe: gun/target 1, DC pulsed, 15s gas flow stabilization (75sccm Ar, 0 power) (baratron still broken), 150s oxide removal (200sccm Ar, 150W, shutter closed), 2400s deposition (100W, shutter open). Chamber pressure 2.3 to 2.6 mTorr. Result: 640nm ITO deposited for a deposition rate about 16 nm/min (a previous ITO run also at 100W was closer to 13nm/min with 2.3mTorr pressure). Sheet resistance is ~75ohm/sq; decreases > 5x with annealing at ~350C. |

Berkeley Autonomous Microsystems Lab

User Tools

Site Tools

Page Tools