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--- sts2 [2021/11/16 15:58]
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+++ sts2 [2021/11/18 14:40] (current)
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 For Si etching down to perhaps 40um deep.
-Typically, we deposit 2um MiR 701 photoresist on top of silicon, then use on the order of 60 cycles of the standard sts2 deep silicon etch. DRIE photoresist vs. silicon etch selectivity is around 1:50 or 1:100 (it varies).
+Typically, we deposit 2um MiR 701 photoresist (see [[mla150|mla150 data]]) on top of silicon, hardbake in axcelis (recipe U), then use on the order of 60 cycles of the standard sts2 deep silicon etch. DRIE photoresist vs. silicon etch selectivity is around 1:50 or 1:100 (it varies).
 ^ Date ^ Person ^ Data ^

Berkeley Autonomous Microsystems Lab