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recipe-liftoff
This is an old revision of the document!
Liftoff Recipe
asap-liftoff automatically dissolves and removes photoresist and any metals deposited on top to complete a liftoff process. We often use it while patterning gold.
- Expose and develop photoresist. A special liftoff resist is available on svgcoat3 or headway.
- Evaporate or sputter metal on top.
- Remove photoresist, usually with asap-liftoff.
Useful Notes
- Don't hard bake photoresist. This makes it much more difficult to remove (at least 10x longer in asap-liftoff)
- High temperature evaporation (e.g., Pt) can make the wafers hot enough to melt photoresist; the photoresist tends to flake (“reticulate”) and unwanted metal can be deposited in the cracks. To fix this, (a) minimize evaporation time by using thin layers or high deposition rates, (b) run evaporation in steps allowing wafers to cool in between, (b) use temperature-resistant photoresist.
Process Notes
| Date | Person | Data |
|---|---|---|
| 10 Dec 2020 | Daniel | Accidentally UV hard baked standard 2um MiR701 with axcelis recipe U for 26nm Cr + 282nm Au liftoff. Had to run recipe 17 (high intensity 6“ wafer with soak) 13 times (!) to complete liftoff, but it worked in the end. Lesson: don't hard bake liftoff photoresist. |
| 12 Jul 2021 | Daniel | Learned that LOR liftoff resist may be resistant to higher temperatures than MiR701 and so may work much better for high temperature metal deposition (e.g., Pt). |
recipe-liftoff.1626241461.txt.gz · Last modified: 2021/07/13 22:44 by dteal
