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sts2
This is an old revision of the document!
sts2
sts2 is a silicon DRIE etcher. We use it to etch 40um and 550um trenches in silicon. It sits to the left of the near-identical sts-oxide tool, an ICP etcher for SiO2.
Process Notes
| Date | Person | Data |
|---|---|---|
| 11 Jan 2021 | Daniel | Etching the entire surface of a 6“ silicon wafer with the standard deep silicon recipe leaves thick sulfer dust on top of the wafer! Apparently, the overabundance of silicon means more fluorine leaves the etch as SiF4 and there is not enough fluorine left to carry the sulfer away in a gaseous state. The solution is to increase the SF6 and O2 flow rates during the etch (from 130/30 to 260/26 or something). |
| 18 Jan 2021 | Daniel | On the other hand, if almost the entire wafer surface is masked by photoresist, some of the activated neutrals in the plasma appear to be able to make their way around the edge of the wafer and make a very minor etch in a ring where the wafer sits on the edge of the platen. |
sts2.1612944260.txt.gz · Last modified: 2021/02/10 00:04 by dteal
